ZXMN10A08DN8 Просмотр технического описания (PDF) - Zetex => Diodes

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ZXMN10A08DN8

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN10A08DN8

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-source voltage

Gate source voltage

Continuous drain current

VGS=10V;

VGS=10V;

VGS=10V;

TA=25°C

TA=70°C

TA=25°C

(b)

(b)

(a)

Pulsed drain current (c)

Continuous source current (body diode) (b)

Pulsed source current (body diode) (c)

Power dissipation at TA=25°C (a)

Linear derating factor

Power dissipation at TA=25°C (b)

Linear derating factor

Operating and storage temperature range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

100

20

2.1

1.7

1.6

9

2.6

9

1.25

10

1.8

14.5

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

Junction to ambient (a)

Junction to ambient (b)

SYMBOL

RθJA

RθJA

VALUE

100

69

UNIT

°C/W

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph

ISSUE 4 - JANUARY 2005

SEMICONDUCTORS

2

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