XP132A1275SR Просмотр технического описания (PDF) - TOREX SEMICONDUCTOR
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производитель
XP132A1275SR Datasheet PDF : 5 Pages
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XP132A1275SR
■ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
SYMBOL
Idss
Igss
Vgs(off)
Drain-Source On-State Resistance * Rds(on)
Forward Transfer Admittance *
| Yfs |
CONDITIONS
Vds=-20V, Vgs=0V
Vgs=±12V, Vds=0V
Id=-1mA, Vds=-10V
Id=-3A, Vgs=-4.5V
Id=-3A, Vgs=-2.5V
Id=-3A, Vds=-10V
Body Drain Diode
Forward Voltage
Vf
If=-5A, Vgs=0V
* Effective during pulse test.
MIN.
-
-
-0.5
-
-
-
TYP.
-
-
-
0.06
0.092
8
Ta = 25℃
MAX. UNITS
-10
μA
±1
μA
-1.2
V
0.075
Ω
0.115
Ω
-
S
-
-0.85 -1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=-10V, Vgs=0V
f=1MHz
MIN.
-
-
-
TYP.
770
440
180
Ta = 25℃
MAX. UNITS
-
pF
-
pF
-
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=-5V, Id=-3A
Vdd=-10V
MIN.
-
-
-
-
TYP.
10
25
45
40
Ta = 25℃
MAX. UNITS
-
ns
-
ns
-
ns
-
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN.
-
TYP. MAX. UNITS
50
-
℃/W
2/5
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