ST3406SRG Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST3406SRG Datasheet PDF : 6 Pages
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ST3406SRG
N Channel Enhancement Mode MOSFET
5.4A
DESCRIPTION
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
FEATURE
30V/5.4A, RDS(ON) = 26mΩ(Typ.)
@VGS = 10V
30V/4.6A, RDS(ON) = 38mΩ
@VGS = 4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
A6YA
1
2
Y: Year Code A: Week Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406SRG 2006. V1
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