ESD5102 Просмотр технического описания (PDF) - ON Semiconductor
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ESD5102 Datasheet PDF : 5 Pages
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ESD5102
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Reverse Working Voltage
VRWM I/O Pin to GND
Breakdown Voltage
VBR IT = 1 mA, I/O Pin to GND
4
5
Reverse Leakage Current
IR
VRWM = 3.3 V, I/O Pin to GND
Clamping Voltage
VC
IPP = 8 A
IEC 61000−4−2 Level 2 equivalent
5.4
TLP (Note 1)
(±4 kV Contact, ±4 kV Air)
IPP = 16 A
IEC 61000−4−2 Level 2 equivalent
6.5
(±8 kV Contact, ±15 kV Air)
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
Max Unit
3.3
V
6.5
V
1
mA
V
5
pF
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