1N4697 Просмотр технического описания (PDF) - Central Semiconductor
Номер в каталоге
Компоненты Описание
производитель
1N4697 Datasheet PDF : 6 Pages
| |||
1N4678 THRU 1N4717
SILICON ZENER DIODE
LOW LEVEL
500mW, 1.8 THRU 43 VOLT
5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4678 series
devices are silicon Zener diodes designed for
applications requiring an extremely low operating
current (50μA), and low leakage.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TL=75°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
500
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.5V MAX @ IF=100mA (for all types)
Type
Zener
Voltage
VZ @ IZT
MIN
NOM
MAX
Test
Current
IZT
Maximum
Reverse Leakage
Current
IR @ VR
Maximum
Voltage
Change*
ΔVZ
V
V
V
μA
μA
V
V
Maximum
Regulator
Current
IZM
mA
1N4678
1.710
1.8
1.890
50
7.5
1.0
0.70
120.0
1N4679
1.900
2.0
2.100
50
5.0
1.0
0.70
110.0
1N4680
2.090
2.2
2.310
50
4.0
1.0
0.75
100.0
1N4681
2.280
2.4
2.520
50
2.0
1.0
0.80
95.0
1N4682
2.565
2.7
2.835
50
1.0
1.0
0.85
90.0
1N4683
2.850
3.0
3.150
50
0.8
1.0
0.90
85.0
1N4684
3.135
3.3
3.465
50
7.5
1.5
0.95
80.0
1N4685
3.420
3.6
3.780
50
7.5
2.0
0.95
75.0
1N4686
3.705
3.9
4.095
50
5.0
2.0
0.97
70.0
1N4687
4.085
4.3
4.515
50
4.0
2.0
0.99
65.0
1N4688
4.465
4.7
4.935
50
10
3.0
0.99
60.0
1N4689
4.845
5.1
5.355
50
10
3.0
0.97
55.0
1N4690
5.320
5.6
5.880
50
10
4.0
0.96
50.0
1N4691
5.890
6.2
6.510
50
10
5.0
0.95
45.0
1N4692
6.460
6.8
7.140
50
10
5.1
0.90
35.0
1N4693
7.125
7.5
7.875
50
10
5.7
0.75
31.8
1N4694
7.790
8.2
8.610
50
1.0
6.2
0.50
29.0
1N4695
8.265
8.7
9.135
50
1.0
6.6
0.10
27.6
1N4696
8.645
9.1
9.555
50
1.0
6.9
0.08
26.2
1N4697
9.500
10
10.50
50
* ΔVZ=VZ @ 100μA Minus VZ @ 10μA
1.0
7.6
0.10
24.8
R5 (8-October 2015)
Share Link: 