A715C Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

производитель

A715C

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA715

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -0.2A

VBE(on) Base-Emitter On Voltage

IC= -1.5A ; VCE= -2V

ICBO

Collector Cutoff Current

VCB= -35V; IE= 0

hFE-1

DC Current Gain

IC= -0.5A ; VCE= -2V

hFE-2

DC Current Gain

IC= -1.5A ; VCE= -2V

fT

Current-Gain—Bandwidth Product

IC= -0.2A ; VCE= -2V

MIN TYP. MAX UNIT

-35

V

-35

V

-5

V

-1.0

V

-1.5

V

-20 μA

60

320

20

160

MHz

‹ hFE-1 Classifications

B

C

D

60-120 100-200 160-320

isc Website：www.iscsemi.cn

2

Share Link: