BD533 Просмотр технического описания (PDF) - Inchange Semiconductor
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BD533 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD533/535/537
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat-1 Collector-emitter saturation voltage
IC=2 A;IB=0.2 A
VCEsat-2 Collector-emitter saturation voltage
IC=6 A;IB=0.6 A
VBE
Base-emitter on voltage
IC=2A ; VCE=2V
BD533
ICBO
Collector cut-off current BD535
BD537
VCB=45V; IE=0
VCB=60V; IE=0
VCB=80V; IE=0
BD533
ICES
Collector cut-off current BD535
VCE=45V; VBE=0
VCE=60V; VBE=0
BD537
VCE=80V; VBE=0
IEBO
hFE-1
Emitter cut-off current
DC current gain
VEB=5V; IC=0
BD533/535
BD537
IC=10mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=2V
hFE-3
DC current gain
(All device)
Group: J
Group: K
IC=2A ; VCE=2V
hFE-4
DC current gain
(All device)
Group: J
Group: K
IC=3A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=1V
MIN TYP. MAX UNIT
0.8
V
0.8
V
1.5
V
0.1
mA
0.1
mA
1
mA
20
15
40
30
75
40
100
15
20
3
12
MHz
2
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