2SD1650 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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производитель
2SD1650 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter sustaining voltage IC=0.1A , IB=0
VCEsat Collector-emitter saturation voltage IC=2.5A ;IB=0.8A
VBEsat Emitter-base saturation voltage
IC=2.5A ;IB=0.8A
ICBO
Collector cut-off current
ICES
Collector cut-off current
VCB=800V; IE=0
VCES=1500V; RBE=∞
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
VF
Diode forward voltage
IF=3.5A
www.jmnic.com
2SD1650
MIN TYP. MAX UNIT
800
V
5.0
8.0
V
1.5
V
10
μA
1.0
mA
40
130
mA
8
3
MHz
2.0
V
JMnic
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