DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NE3210S01 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге
Компоненты Описание
производитель
NE3210S01
NEC
NEC => Renesas Technology NEC
NE3210S01 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TYPICAL CHARACTERISTICS (TA = +25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
100
50
0
50
100 150 200 250
Ambient Temperature TA (°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
60
40
20
0
–2.0
–1.0
0
Gate to Source Voltage VGS (V)
NE3210S01
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
60
VGS = 0 V
40
–0.2 V
20
–0.4 V
–0.6 V
0
1.0
2.0
Drain to Source Voltage VDS (V)
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
20
MSG.
VDS = 2 V
ID = 10 mA
MAG.
16
12
|S21S|2
8
4
1
2
4 6 8 10 14 20 30
Frequency f (GHz)
Data Sheet P14067EJ2V0DS00
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]