2SC5079 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SC5079

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC5079

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

8

V

1.5

V

20

mA

100

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector cutoff current

I CBO

—

—

10

µA

VCB = 15 V, IE = 0

I CEO

—

—

1

mA

VCE = 8 V, RBE = ∞

Emitter cutoff current

I EBO

—

—

10

µA

VEB = 1.5 V, IC = 0

DC current transfer ratio

hFE

50

120 160

VCE = 5 V, IC = 10 mA

Collector output capacitance Cob

—

0.3 0.8 pF

VCB = 5 V, IE = 0, f = 1 MHz

Gain bandwidth product

fT

9

12

—

GHz VCE = 5 V, IC = 5 mA

Power gain

PG

14

17

20

dB

VCE = 5 V, IC = 10 mA,

f = 900 MHz

Noise figure

NF

—

1.6 2.5 dB

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Note: Marking is “ZC–”.

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

See characteristic curves of 2SC5078.

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