BUP603D Просмотр технического описания (PDF) - Siemens AG

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BUP603D

IGBT With Antiparallel Diode

Siemens AG 

BUP 603D

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 300 V, VGE = 15 V, IC = 30 A

RGon = 33 Ω

-

50

Rise time

tr

VCC = 300 V, VGE = 15 V, IC = 30 A

RGon = 33 Ω

-

80

Turn-off delay time

td(off)

VCC = 300 V, VGE = -15 V, IC = 30 A

RGoff = 33 Ω

-

250

Fall time

tf

VCC = 300 V, VGE = -15 V, IC = 30 A

RGoff = 33 Ω

-

500

ns

75

120

340

700

Free-Wheel Diode

Diode forward voltage

IF = 20 A, VGE = 0 V, Tj = 25 °C

IF = 20 A, VGE = 0 V, Tj = 125 °C

Reverse recovery time

IF = 20 A, VR = -300 V, VGE = 0 V

diF/dt = -300 A/µs, Tj = 25 °C

Reverse recovery charge

IF = 20 A, VR = -300 V, VGE = 0 V

diF/dt = -300 A/µs

Tj = 25 °C

Tj = 125 °C

VF

-

-

trr

-

Qrr

-

-

V

1.8

-

1.6

-

ns

110

160

µC

0.6

1.1

1.3

2.4

Semiconductor Group

3

Dec-02-1996

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