2SB612 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SB612

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2SB612

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A

VBE(on) Base-Emitter On Voltage

IC= -1A; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -160V; IE= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

hFE-2

DC Current Gain

IC= -7A; VCE= -5V

MIN TYP. MAX UNIT

-140

V

-6

V

-1.5

V

-1.5

V

-10 μ A

35

200

20

 hFE-1 Classifications

A

B

C

35-70 60-120 100-200

isc Website：www.iscsemi.cn

2

isc & iscsemi is registered trademark

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