2SD2012-TO-220F Просмотр технического описания (PDF) - TY Semiconductor
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2SD2012-TO-220F Datasheet PDF : 2 Pages
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Product specification
TO-220F Plastic-Encapsulate Transistors
2SD2012 TRANSISTOR (NPN)
FEATURES
z Audio frequency power amplifier applications
z High DC current gain
z Low saturation voltage
z High power dissipation
TO – 220F
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
Value
60
60
7
3
2
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
collector capacitance
Symbol Test conditions
V(BR)CBO IC=100μA , IE=0
V(BR)CEO IC=50mA, IB=01）
V(BR)EBO IE=100μA, IC=0
ICBO
VCB=60V, IE=0
IEBO
VEB=7V, IC=0
hFE1 VCE=5V, IC=0.5A
hFE2
VCE=5V, IC=2A
VCE(sat) IC=2A, IB=0.2A
VBE
VCE=5V, IC=0.5A
fT
VCE=5V, IC=0.5A
Cob VCB=10V, IE=0,f=1MHz
MIN TYP MAX UNIT
60
V
60
V
7
V
100 μA
100 μA
100
320
20
1
V
1
V
3
MHz
35
pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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