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HA-5104/883 Просмотр технического описания (PDF) - Intersil

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HA-5104/883 Datasheet PDF : 5 Pages
1 2 3 4 5
HA5104/883
Die Characteristics
DIE DIMENSIONS:
95 x 99 x 19 mils ± 1 mils
2420 x 2530 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
1.43 x 105 A/cm2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT: 175
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
+IN2
HA5104/883
V+
-IN2
+IN1
-IN1
OUT2
OUT3
OUT1
OUT4
-IN3
-IN4
+IN3
V-
+IN4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
3-118
Spec Number 511014-883

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