MURF1060N Просмотр технического описания (PDF) - Thinki Semiconductor Co., Ltd.

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производитель

MURF1060N

10.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier

Thinki Semiconductor Co., Ltd. 

MURF1005 thru MURF1060

®

MURF1005 thru MURF1060

Pb

Pb Free Plating Product

10.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier

Features

¬ Fast switching for high efficiency

¬ Low forward voltage drop

¬ High current capability

¬ Low reverse leakage current

¬ High surge current capability

ITO-220AB

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

Unit : inch (mm)

.189(4.8)

.165(4.2)

.130(3.3)

.114(2.9)

Mechanical Data

¬ Case:ITO-220AB Isolated/Insulated

¬ Epoxy: UL 94V-0 rate flame retardant

¬ Terminals: Solderable per MIL-STD-202

method 208

¬ Polarity:As marked on diode body

¬ Mounting position: Any

¬ Weight: 2.24 grams

.071(1.8)

.055(1.4)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.1

(2.55)

.1

(2.55)

.114(2.9)

.098(2.5)

.032(.8)

MAX

Case

Case

Case

Case

Positive

Negative

Common Cathode Common Anode

Suffix "CT"

Suffix "N"

Doubler Reverse Doubler

Suffix "D"

Suffix "E"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25oC ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

COMMON CATHODE POLARITY

SUFFIX "CT"

MURF1005CT MURF1010CT MURF1020CT MURF1030CT MURF1040CT MURF1060CT

COMMON ANODE POLARITY

DOUBLER POLARITY

SUFFIX "N" SYMBOL MURF1005N MURF1010N MURF1020N MURF1030N MURF1040N MURF1060N UNIT

SUFFIX "D"

MURF1005D MURF1010D MURF1020D MURF1030D MURF1040D MURF1060D

REVERSE POLARITY

SUFFIX "E"

MURF1005E MURF1010E MURF1020E MURF1030E MURF1040E MURF1060E

Maximum Recurrent Peak Reverse Voltage VRRM

50

100

200

300

400

600

V

Maximum RMS Voltage

VRMS

35

70

140

210

280

420

V

Maximum DC Blocking Voltage

VDC

50

100

200

300

400

600

V

Maximum Average Forward Rectified

Current TC=100oC

IF(AV)

10.0

A

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM

(JEDEC method)

100

A

Maximum Instantaneous Forward Voltage

@ 5.0 A

Maximum DC Reverse Current @TJ=25oC

At Rated DC Blocking Voltage @TJ=125oC

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating Junction and Storage

Temperature Range

VF

IR

Trr

CJ

R JC

TJ, TSTG

0.98

1.3

10.0

250

35

65

2.2

-55 to +150

1.7

V

uA

uA

nS

pF

oCW

oC

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

© 2006 Thinki Semiconductor Co.,Ltd.

http://www.thinkisemi.com/

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