MTW14N50E Просмотр технического описания (PDF) - ON Semiconductor
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MTW14N50E Datasheet PDF : 8 Pages
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MTW14N50E
TYPICAL ELECTRICAL CHARACTERISTICS
20
18 TJ = 25°C
16
14
10 V
7V
6V
12
10
8
6
VGS = 5 V
4
2
4V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. . On–Region Characteristics
20
18
VDS ≥ 10 V
16
14
12
10
8
TJ = 100°C
6
-ā55°C
25°C
4
2
0
0 1 2 3 4 5 6 7 8 9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. . Transfer Characteristics
1.0
VGS = 10V
0.8
0.6
TJ = 100°C
0.4
TJ = 25°C
0.2
TJ = -55°C
0.0
0
4
8
12
16
20
24
28
ID, DRAIN CURRENT (AMPS)
Figure 3.. On–Resistance versus Drain
Current
0.38
0.36
0.34
TJ = 25°C
0.32
0.30
0.28
VGS = 10 V
0.26
VGS = 15 V
0.24
0.22
0.20
0
4
8
12
16
20
24
28
ID, DRAIN CURRENT (AMPS)
Figure 4.. On–Resistance versus Drain Current
2.5
100000
VGS = 0 V
TJ = 125°C
2.0
20000
10000
1.5
1.0
0.5
0
-50
2000
1000
VGS = 10 V
ID = 7 A
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (°C)
200
100
20
10
0
TJ = 100°C
TJ = 25°C
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5.. On–Resistance Variation
With Temperature
Figure 6.. Drain–To–Source Leakage
Current versus Voltage
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