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Компоненты Описание
BB502M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
BB502M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
BB502M Datasheet PDF : 13 Pages
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Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
BB502M
Typical Output Characteristics
20
V
G2S
= 4 V
V
G1
= V
DS
16
12
8
180
220
270
k
Ω
k
Ω
k
Ω
4
330
k
Ω
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 120 k
Ω
16
4V
12
3V
2V
8
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 180 k
Ω
16
12
4V
3V
8
2V
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
5
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