MGSF1N02LT1 Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

MGSF1N02LT1

Power MOSFET 750 mAmps, 20 Volts N–Channel SOT–23

TY Semiconductor 

Product specification

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µAdc)

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 1.2 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

V(BR)DSS

IDSS

IGSS

VGS(th)

rDS(on)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 5.0 Vdc)

(VDS = 5.0 Vdc)

(VDG = 5.0 Vdc)

Ciss

Coss

Crss

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 Ω)

Fall Time

Gate Charge (See Figure 6)

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

Pulsed Current

Forward Voltage (Note 2.)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

td(on)

tr

td(off)

tf

QT

IS

ISM

VSD

MGSF1N02LT1

Min

Typ

Max

Unit

20

–

–

Vdc

µAdc

–

–

1.0

–

–

10

–

–

±100

nAdc

1.0

1.7

2.4

Vdc

Ohms

–

0.075 0.090

–

0.115 0.130

–

125

–

pF

–

120

–

–

45

–

–

2.5

–

ns

–

1.0

–

–

16

–

–

8.0

–

–

6000

–

pC

–

–

0.6

A

–

–

0.75

–

0.8

–

V

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