SN 7002
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.45
Ptot = 0W
k
Ab
hjli g f
e
ID 0.35
0.30
0.25
0.20
0.15
0.10
VGS [V]
a
2.0
b
2.5
c
3.0
d
3.5
de
4.0
f
4.5
g
5.0
ah
6.0
c
i
7.0
j
8.0
k
9.0
l
10.0
0.05
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
16
ca
Ω
RDS (on)
12
10
8
6
d
4
2 VGS [V] =
abcdef
2.0 2.5 3.0 3.5 4.0 4.5
0
e
ghi
lki
gj
f
h
j kl
5.0 6.0 7.0 8.0 9.0 10.0
b
0.00 0.04 0.08 0.12 0.16
A
0.24
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
1.1
A
ID
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
0.40
S
gfs
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1.0
ID
Sep-13-1996