4953BDYSS Просмотр технического описания (PDF) - GTM CORPORATION

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Компоненты Описание

производитель

4953BDYSS

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM CORPORATION 

ISSUED DATE :2006/07/14

REVISED DATE :

Fig 7. Maximum Safe Operating Area

V DS = - 15 V

I D = - 5.0 A

Fig 8. Gate Threshold Voltage

v.s. Junction Temperature

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

Fig 11. Switching Time Circuit

GSS4953BDY

Fig 12. Switching Time Waveform

Page: 4/5

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