BCR10CS-12LB-T11 Просмотр технического описания (PDF) - Renesas Electronics

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BCR10CS-12LB-T11

Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)

Renesas Electronics 

BCR10CS-12LB (The product guaranteed maximum junction temperature of 150°C)

Parameter

RMS on-state current

Surge on-state current

I2t for fusing

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

Peak gate current

Junction temperature

Storage temperature

Mass

Notes: 1. Gate open.

Symbol

IT (RMS)

ITSM

I2t

PGM

PG (AV)

VGM

IGM

Tj

Tstg

—

Ratings

10

100

41.6

5

0.5

10

2

– 40 to +150

– 40 to +150

1.2

Unit

Conditions

A

Commercial frequency, sine full wave

360° conduction, Tc = 128°CNote3

A

60Hz sinewave 1 full cycle, peak value,

non-repetitive

A2s

Value corresponding to 1 cycle of half

wave 60Hz, surge on-state current

W

W

V

A

°C

°C

g

Typical value

Electrical Characteristics

Parameter

Symbol Min. Typ. Max. Unit

Test conditions

Repetitive peak off-state current

IDRM

—

On-state voltage

VTM

—

Gate trigger voltageNote2

Ι

VFGTΙ

—

ΙΙ

VRGTΙ

—

ΙΙΙ

VRGTΙΙΙ

—

Gate trigger currentNote2

Ι

IFGTΙ

—

ΙΙ

IRGTΙ

—

ΙΙΙ

IRGTΙΙΙ

—

—

2.0

mA Tj = 150°C, VDRM applied

—

1.5

V Tc = 25°C, ITM = 15 A,

Instantaneous measurement

—

1.5

V Tj = 25°C, VD = 6 V, RL = 6 Ω,

—

1.5

V

RG = 330 Ω

—

1.5

V

—

30Note6 mA Tj = 25°C, VD = 6 V, RL = 6 Ω,

—

30Note6

mA

RG = 330 Ω

—

30Note6

mA

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltageNote5

VGD

0.2/0.1

—

Rth (j-c)

—

—

(dv/dt)c 10/1

—

—

V

Tj = 125°C/150°C, VD = 1/2 VDRM

1.8

°C/W Junction to caseNote3 Note4

—

V/µs Tj = 125°C/150°C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured on the T2 tab.

4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.

5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

6. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1)

Test conditions

1. Junction temperature

Tj = 125°C/150°C

2. Rate of decay of on-state commutating current

(di/dt)c = – 5.0 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

Time

VD

REJ03G0469-0300 Rev.3.00 Nov 30, 2007

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