BUT11A Просмотр технического описания (PDF) - Philips Electronics

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производитель

BUT11A

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT11; BUT11A

handbook, full pagewidth

102

IC

(A)

ICM max

10

IC max

(1)

1

δ = 0.01

II

tp =

20 µs

50 µs

100 µs

MGB950

10−1

10−2

10−3

10

I

(2)

200 µs

500 µs

1 ms

2 ms

10 ms

DC

III

BUT11

BUT11A

IV

102

103

VCE (V)

104

Tmb ≤ 25 °C.

I - Region of permissible DC operation.

II - Permissible extension for repetitive pulse operation.

III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs.

IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 5 ms.

(1) Ptot max and Ptot peak max lines.

(2) Second breakdown limits.

Fig.4 Forward bias SOAR.

1997 Aug 13

4

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