BUT11A Просмотр технического описания (PDF) - Philips Electronics

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производитель

BUT11A

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCESM

VCEO

IC

ICM

IB

IBM

Ptot

Tstg

Tj

collector-emitter peak voltage

BUT11

BUT11A

collector-emitter voltage

BUT11

BUT11A

collector current (DC)

collector current (peak value)

base current (DC)

base current (peak value)

total power dissipation

storage temperature

junction temperature

VBE = 0

open base

see Figs 2 and 4

tp < 2 ms; see Fig. 4

tp < 2 ms

Tmb ≤ 25 °C; see Fig.3

Product specification

BUT11; BUT11A

MIN.

MAX.

UNIT

−

850

V

−

1 000

V

−

400

V

−

450

V

−

5

A

−

10

A

−

2

A

−

4

A

−

100

W

−65

+150

°C

−

150

°C

5

handbooIkC, halfpage

(A)

4

3

2

1

0

0

400

MGB895

(1) (2)

800 VCE (V) 1200

(1) BUT11.

(2) BUT11A.

Fig.2 Reverse bias SOAR.

handbook1,2h0alfpage

Ptot max

(%)

80

MGD283

40

0

0

50

100 Tmb (oC) 150

Fig.3 Power derating curve.

1997 Aug 13

2

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