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MTP2955VG Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание
производитель
MTP2955VG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MTP2955VG Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MTP2955V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (Note 3)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk 2.0) (Note 3)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 6.0 Adc)
(Cpk 1.5) (Note 3)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 12 Adc)
(VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc, RG = 9.1 W)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit Typ
Cpk =
3 x SIGMA
Symbol Min Typ Max Unit
V(BR)DSS
60
58
Vdc
mV/°C
IDSS
mAdc
10
100
IGSS
100 nAdc
VGS(th)
RDS(on)
VDS(on)
gFS
2.0 2.8 4.0 Vdc
5.0
mV/°C
W
0.185 0.230
Vdc
2.9
2.5
3.0 5.0
mhos
Ciss
Coss
Crss
550 700
pF
200 280
50 100
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
15
30
ns
50 100
24
50
39
80
19
30
nC
4.0
9.0
7.0
VSD
trr
ta
tb
QRR
Vdc
1.8 3.0
1.5
115
ns
90
25
0.53
mC
LD
nH
4.5
LS
nH
7.5
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