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Номер в каталоге
Компоненты Описание
HZS30L1 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
HZS30L1
Silicon Epitaxial Planar Zener Diode for Low Noise Application
Renesas Electronics
HZS30L1 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
HZS-L Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
Unit
400
mW
200
°C
–55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
V
Z
(V)
*
1
Type
Grade Min
Max
HZS6L A1
5.2
5.5
A2
5.3
5.6
A3
5.4
5.7
B1
5.5
5.8
B2
5.6
5.9
B3
5.7
6.0
C1
5.8
6.1
C2
6.0
6.3
C3
6.1
6.4
HZS7L A1
6.3
6.6
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
B2
6.9
7.2
B3
7.0
7.3
C1
7.2
7.6
C2
7.3
7.7
C3
7.5
7.9
Note: 1. Tested with DC.
Test
Condition
I
Z
(mA)
0.5
Reverse Current
Test
I
R
(
µ
A) Condition
Max
V
R
(V)
1
2.0
Dynamic Resistance
r
d
(
Ω
)
Test
Condition
Max
I
Z
(mA)
150
0.5
80
0.5
60
0.5
0.5
1
3.5
60
0.5
Rev.2.00, Jan.06.2003, page 2 of 6
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