HMC320MS8G(V00) Просмотр технического описания (PDF) - Hittite Microwave

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Компоненты Описание

производитель

HMC320MS8G
(Rev.:V00)

GaAs MMIC LOW NOISE AMPLIFIER , 5.0 - 6.0 GHz

Hittite Microwave 

v00.0900

MICROWAVE CORPORATION

8

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+7.0 Vdc

Control Voltage Range (VSET)

0 to Vdd

RF Input Power (RFin)(Vdd = +3.0 Vdc) +5 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 2.98 mW/°C above 85 °C)

0.194 W

Thermal Resistance

(channel to ground paddle)

336 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Outline Drawing

HMC320MS8G

GaAs MMIC LOW NOISE

AMPLIFIER , 5.0 - 6.0 GHz

Truth Table

VSET

Operating

Current Idd

Operating

State

Resistor Rbias

0V

7 mA

Low Power

174 Ohm

3V

25 mA

Medium Power

23 Ohm

3V

40 mA

High Power

7 Ohm

Set external bias resistor (RBIAS) to achieve

desired operating current, 0 < RBIAS < 200 Ohm.

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

8 - 96

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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