Figure 14. Saturation voltage versus
collector current and modulation
depth SFH600-1 VCEsat=f (IC) (TA=25°C)
Figure 17. Permissible pulse load
D=parameter, TA=25°C, IF=f (tp)
Figure 20. Transistor capacitance
C=f(VO) (TA=25°C, f=1 MHz)
Figure 15. Saturation voltage versus
collectorcurrent and modulation
depth SFH600-2 VCEsat=f (IC) (TA=25°C)
Figure 18. Permissible power
dissipation for transistor and diode
Ptot=f (TA)
Figure 16. Saturation voltage versus
collectorcurrent and modulation
depth SFH600-3 VCEsat=f (IC) (TA=25°C)
Figure 19. Permissible forward
current diode Ptot=f (TA)
SFH600
5–4