3SK317 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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3SK317 Datasheet PDF : 8 Pages
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3SK317
Forward Transfer Admittance vs.
Gate1 to Source Voltage
30
VDS= 6 V
f = 1kHz
3V
24
2.5 V
18
2V
12
1.5 V
6
1V
VG2S = 0.5 V
0
0.4 0.8 1.2 1.6 2
Gate1 to source voltage VG1S (V)
Power Gain vs. Drain Current
50
VDS= 6 V
40
VG2S= 3V
f = 200MHz
30
20
10
0
4
8
12 16 20
Drain current I D (mA)
Noise Figure vs. Drain Current
5
VDS= 6 V
4
VG2S= 3V
f = 200MHz
3
2
1
0
4
8
12 16
20
Drain current I D (mA)
Power Gain vs. Drain to Source Voltage
50
VG2S= 3V
40
I D = 10mA
f = 200MHz
30
20
10
0
2
4
6
8 10
Drain to source voltage VDS (V)
4
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