STTH40P03SFP Просмотр технического описания (PDF) - STMicroelectronics
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STTH40P03SFP Datasheet PDF : 8 Pages
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STTH40P03S
Figure 5: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
TO-220FPAB
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
Figure 6: Peak reverse recovery current versus
dIF/dt (typical values)
IRM(A)
20
18
IF≤IF(AV)
VR=100V
Tj=100°C
16
14
12
10
8
6
4
2
dIF/dt(A/µs)
0
0 100 200 300 400 500 600 700 800 900 1000
Figure 7: Reverse recovery time versus dIF/dt
(typical values)
trr(ns)
60
55
50
IF≤IF(AV)
VR=100V
Tj=100°C
45
40
35
30
25
20
15
10
5
dIF/dt(A/µs)
0
0 100 200 300 400 500 600 700 800 900 1000
Figure 8: Reverse recovery softness factor
versus dIF/dt (typical values)
S factor
0.8
IF≤IF(AV)
VR=100V
0.7
Tj=100°C
0.6
0.5
0.4
0.3
0.2
0
dIF/dt(A/µs)
100 200 300 400 500 600 700 800 900 1000
Figure 9: Relative variations of dynamic
parameters versus junction temperature
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
20
IRM
30
40
S factor
Tj(°C)
50
60
70
IF=IF(AV)
VR=100V
Reference: Tj=100°C
80
90
100
Figure 10: Transient peak forward voltage
versus dIF/dt (typical values)
VFP(V)
7.0
6.5
IF=IF(AV)
Tj=100°C
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
dIF/dt(A/µs)
0.0
0 100 200 300 400 500 600 700 800 900 1000
4/8
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