VCR11N Просмотр технического описания (PDF) - InterFET
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VCR11N Datasheet PDF : 1 Pages
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C-10
01/99
VCR11N
N-Channel Silicon Voltage Controlled Resistor JFET
¥ Small Signal Attenuators
¥ Filters
¥ Amplifier Gain Control
¥ Oscillator Amplitude Control
Absolute maximum ratings at TA = 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 15 V
10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Static Drain Source ON Resistance Ratio
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
V(BR)GSS
IGSS
VGS(OFF)
rDS(MIN)
rDS(MAX)
rds(on)
Cdg
Csg
VCR11N
Min
Max
– 25
– 0.2
–8
– 12
.95
1
.95
1
Process NJ26
Unit
Test Conditions
V IG = – 1 µA, VDS = ØV
nA VGS = – 15V, VDS = ØV
V ID = 1 µA, VDS = – 10V
VDS = 100 mV, rDS1 = 200Ω
VGS1 = VGS2, rDS1 = 2 kΩ
70
200
Ω VGS = ØV, ID = ØA
7.5
pF VDG = 10V, IS = ØA
7.5
pF VGS = 10V, ID = ØA
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source , 2 Drain 1, 3 Gate 1,
5 Source 2, 6 Drain 2, 7 Gate 2
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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