AL7200 Просмотр технического описания (PDF) - Vishay Semiconductors
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AL7200 Datasheet PDF : 5 Pages
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TSAL7200
High Power Infrared Emitting Diode, Vishay Semiconductors
940 nm, GaAlAs/GaAs
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10 1
IFSM = 1 A (Single Pulse)
tp/T = 0.01
10 0
0.05
0.1
0.5
10-1 1.0
10-2
10-1
100
101
102
96 11987
tp - Pulse Duration (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
1000
100
10
1
0.1
10 0
10 1
10 2
10 3
10 4
13602
IF - Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
104
103
102
tP = 100 µs
tP/T = 0.001
101
100
0
1
2
3
4
13600
VF - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
1.6
1.2
IF = 20 mA
0.8
0.4
0
- 10 0 10
50
100
140
94 7993
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000
100
10
1
0.1
100
13601
101
102
103
104
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
1.25
1.0
0.75
0.5
0.25
IF = 100 mA
0
890
940
990
14291
λ - Wavelength (nm)
Fig. 8 - Relative Radiant Power vs. Wavelength
Document Number: 81012
Rev. 1.8, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
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