BFQ34 Просмотр технического описания (PDF) - Philips Electronics
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BFQ34 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ34
handbook,4h0alfpage
gain
(dB)
30
MEA319
20
10
0
10 –1
G UM
Is12 I 2
1
f (GHz)
10
Ic = 120 mA; VCE = 15 V; Tamb = 25 °C.
Fig.6 Gain as a function of frequency.
handbook,2h0alfpage
d im
(dB)
30
MEA321
40
50
60
70
50
100
I C (mA)
150
Vo = 1.2 V; VCE = 15 V; f(p+q−r) = 793.25 MHz
Fig.7 Intermodulation distortion as a function of
collector current.
September 1995
6
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