BFQ34 Просмотр технического описания (PDF) - Philips Electronics
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BFQ34 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ34
handbook, halfpage2.2 nF
VBB
input
75 Ω
L1
10 nF
0.68 pF
2.2 nF
L2
200 Ω
10 nF
10 nF
DUT
VCC
output
75 Ω
24 Ω
24 Ω
MEA322
handboo1k,2h0alfpage
h FE
80
40
0
0
40
MBB361
80
120
160
I C (mA)
f = 40 to 860 MHz; L1 = L2 = 5 µH Ferroxcube coil.
Fig.2 Intermodulation distortion MATV test circuit.
VCE = 15 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current.
handbook, h6alfpage
Cc
(pF)
4
MEA320
2
0
0
10
VCB (V)
20
IE = 0; f = 1 MHz; Tj = 25 °C.
Fig.4 Collector capacitance as a function of
collector-base voltage.
September 1995
8
handbook, halfpage
fT
(GHz)
6
MBB357
4
2
0
0
40
80
120
160
IC (mA)
VCE = 15 V; f = 500 MHz; Tj = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
5
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