BFQ34 Просмотр технического описания (PDF) - Philips Electronics
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BFQ34 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ34
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
Cc-s
collector-stud capacitance
F
noise figure (see Fig.2)
GUM
maximum unilateral power gain
(note 2)
Vo
output voltage
PL1
output power at 1 dB gain
compression (see Fig.2)
ITO
third order intercept point (see Fig.2)
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 15 V
− − 100 µA
IC = 75 mA; VCE = 15 V
25 70 −
IC = 150 mA; VCE = 15 V
25 70 −
IC = 75 mA; VCE = 15 V; f = 500 MHz 3 3.5 −
GHz
IC = 150 mA; VCE = 15 V;
f = 500 MHz
3.5 4 −
GHz
IE = 0; VCB = 15 V; f = 1 MHz
−
IC = 0; VEB = 0.5 V; f = 1 MHz
−
IC = 10 mA; VCE = 15 V; f = 1 MHz; −
Tamb = 25 °C
note 1
−
IC = 120 mA; VCE = 15 V;
−
f = 500 MHz; Tamb = 25 °C
IC = 120 mA; VCE = 15 V;
−
f = 500 MHz; Tamb = 25 °C
Figs 2 and 7 and note 3
−
2 2.75 pF
11 −
pF
1 1.35 pF
0.8 −
pF
8−
dB
16.3 −
dB
1.2 −
V
note 4
− 26 −
dBm
note 5
− 45 −
dBm
Notes
1. Measured with grounded emitter and base.
2. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
3. dim = −60 dB (DIN 45004B, par. 6.3.: 3-tone); IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB; fq = 803.25 MHz;
Vr = VO −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
4. IC = 120 mA; VCE = 15 V; Tamb = 25 °C; RL = 75 Ω;
measured at f = 800 MHz.
5. IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C;
Pp = ITO − 6 dB; fp = 800 MHz;
Pq = ITO − 6 dB; fq = 801 MHz;
measured at f(2q−p) = 802 MHz and at f(2p−q) = 799 MHz.
September 1995
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