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BFQ34/01 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BFQ34/01
NPN 4 GHz wideband transistor
Philips Electronics
BFQ34/01 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ34
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T
c
= 160
°
C
MIN. MAX. UNIT
−
25
V
−
18
V
−
2
V
−
150 mA
−
2.7 W
−
65 150
°
C
−
200
°
C
THERMAL RESISTANCE
SYMBOL
R
th j-c
PARAMETER
thermal resistance from junction to case
THERMAL RESISTANCE
15 K/W
September 1995
3
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