DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SFAF501G Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

Номер в каталоге
Компоненты Описание
производитель
SFAF501G
LUGUANG
Shenzhen Luguang Electronic Technology Co., Ltd LUGUANG
SFAF501G Datasheet PDF : 2 Pages
1 2
SFAF501G-SFAF508G
Isolated 5.0AMP. Glass Passivated Super Fast Rectifiers
RATINGS AND CHARACTERISTIC CURVES ( SFAF501G THRU SFAF508G )
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
10
8
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
6
100
TJ=1000C
4
2
00
50
100
150
CASE TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
TJ=1250C
120
8.3ms Single Half Sine Wave
JEDEC Method
90
60
30
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
100
Tj=250C
90
80
70
60
50
40
12
5
10 20
50
100 200
REVERSE VOLTAGE. (V)
500 1000
10
TJ=750C
1
TJ=250C
0.1
0
20 40 60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
30
10
SFASFF5A0F15G05-SGF-SAFFA5F0540G6G
3
1
SFAF507G-SFAF508G
0.3
0.1
0.03
0.01
0.4 0.6
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
NONINDUCTIVE NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
http://www.luguang.cn
mail:lge@luguang.cn
Version: A06

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]