KA1M0880BF Просмотр технического описания (PDF) - Fairchild Semiconductor

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KA1M0880BF

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

KA1M0880BF

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter

Drain Source Breakdown Voltage

Zero Gate Voltage Drain Current

Static Drain Source on Resistance (Note)

Forward Transconductance (Note)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn on Delay Time

Rise Time

Turn Off Delay Time

Fall Time

Total Gate Charge

(Gate-Source+Gate-Drain)

Gate Source Charge

Gate Drain (Miller) Charge

Symbol

BVDSS

IDSS

RDS(ON)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Condition

Min. Typ. Max. Unit

VGS=0V, ID=50µA

800 -

-

V

VDS=Max., Rating,

VGS=0V

-

- 50 µA

VDS=0.8Max., Rating,

VGS=0V, TC=125°C

VGS=10V, ID=5.0A

-

- 200 µA

- 1.2 1.5 Ω

VDS=15V, ID=5.0A

1.5 2.5 -

S

VGS=0V, VDS=25V,

f=1MHz

- 2460 -

- 210 -

pF

- 64 -

VDD=0.5BVDSS, ID=8.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

-

- 90

- 95 200

nS

- 150 450

- 60 150

VGS=10V, ID=8.0A,

VDS=0.5BVDSS (MOSFET

-

switching time are

-

essentially independent of

operating temperature)

-

- 150

20

-

nC

70 -

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2. S = -1--

R

3

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