2SC1027 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SC1027

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1027

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0

80

V

V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0

250

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

5

V

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

1.0

V

VBEsat Base-emitter saturation voltage

IC=5A; IB=0.5A

1.5

V

ICBO

Collector cut-off current

VCB=250V; IE=0

0.1 mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

0.1 mA

固I电NC半H导A体NGE SEMICONDUCTOR hFE

DC current gain

IC=5A ; VCE=2V

10

2

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