2SC1027 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC1027 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1027
DESCRIPTION
·With TO-3 package
·High power dissipation
·Low collector saturation voltage
APPLICATIONS
·Switching regulators
·DC-DC convertor
·General purpose power amplifiers
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
Fig.1 simplified outline (TO-3) and symbol
CONDITIONS
Open emitter
Open base
VALUE
250
80
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
6
A
PC
Collector power dissipation
TC=25℃
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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