2MBI50N-060 Просмотр технического описания (PDF) - Fuji Electric
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2MBI50N-060 Datasheet PDF : 4 Pages
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1000
100
Switching time vs. RG
VCC=300V, IC=50A, VGE=±15V, Tj=25°C
ton
toff
tr
tf
10
10
125
100
100
Gate resistance : RG [Ω ]
Forward current vs. Forward voltage
VGE=OV
Tj=125°C 25°C
75
50
25
0
0
1
2
3
4
Forward voltage : VF [V]
Transient thermal resistance
1
Diode
IGBT
0,1
0,001
0,01
0,1
1
Pulse width : PW [sec]
Dynamic input characteristics
Tj=25°C
500
25
VCC=200V
400
300V 20
400V
300
15
200
10
100
5
0
0
0
50
100
150
200
250
300
Gate charge : QG [nC]
Reverse recovery characteristics
trr, Irr vs. IF
trr
125°C
100
trr
25°C
Irr
125°C
Irr
25°C
10
0
500
20
40
60
80
Forward current : IF [A]
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>51Ω
400
300
SCSOA
(non-repetitive pulse)
200
100
0
0
RBSOA (Repetitive pulse)
100 200 300 400 500 600
Collector-Emitter voltage : VCE [V]
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