ISL12022MAIBZ Просмотр технического описания (PDF) - Intersil

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Компоненты Описание

производитель

ISL12022MAIBZ

Low Power RTC with Battery Backed SRAM, Integrated ±5ppm Temperature Compensation and Auto Daylight Saving

Intersil 

ISL12022MA

Absolute Maximum Ratings

Voltage on VDD, VBAT and IRQ/FOUT pins

(Respect to Ground) . . . . . . . . . . . . . . . . . -0.3V to 6.0V

Voltage on SCL and SDA pins

(Respect to Ground) . . . . . . . . . . . . -0.3V to VDD + 0.3V

ESD Rating

Human Body Model (Per JESD22-A114F) . . . . . . . . . . >3kV

Machine Model (Per JESD22-A115B) . . . . . . . . . . . . >300V

Charge Device Model (Per JESD22-C101D) . . . . . . . . 2.2kV

Latch Up (Tested per JESD-78B; Class 2, Level A) . . . . 100mA

Shock Resistance. . . . . . . . . . . . . . . . 5000g, 0.3ms, 1/2 sine

Vibration (Ultrasound cleaning not advised) . . 20g/10-2000Hz,

Thermal Information

Thermal Resistance (Typical)

θJA (°C/W) θJC (°C/W)

20 Lead SOIC (Notes 4, 5) . . . . . . 70

35

Storage Temperature . . . . . . . . . . . . . . . . . -40°C to +85°C

Pb-Free Reflow Profile (Note 6) . . . . . . . . . . . .see link below

http://www.intersil.com/pbfree/Pb-FreeReflow.asp

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact

product reliability and result in failures not covered by warranty.

NOTES:

4. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief

TB379 for details.

5. For θJC, the “case temp” location is on top of the package and measured in the center of the package between pins 6 and 15.

6. The ISL12022MA Oscillator Initial Accuracy can change after solder reflow attachment. The amount of change will depend on

the reflow temperature and length of exposure. A general rule is to use only one reflow cycle and keep the temperature and

time as short as possible. Changes on the order of ±1ppm to ±3ppm can be expected with typical reflow profiles.

DC Operating Characteristics RTC Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise

stated. Boldface limits apply over the operating temperature range, -40°C to +85°C.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

(Note 7) (Note 8) (Note 7) UNITS NOTES

VDD Main Power Supply

(Note 15)

VBAT

IDD1

IDD2

IDD3

Battery Supply Voltage

Supply Current. (I2C Not Active,

Temperature Conversion Not

Active, FOUT Not Active)

Supply Current. (I2C Active,

Temperature Conversion Not

Active, Fout Not Active)

Supply Current. (I2C Not Active,

Temperature Conversion Active,

FOUT Not Active)

(Note 15)

VDD = 5V

VDD = 3V

VDD = 5V

VDD = 5V

IBAT Battery Supply Current

VDD = 0V, VBAT = 3V,

TA = +25°C

VDD = 0V, VBAT = 3V

IBATLKG Battery Input Leakage

VDD = 5.5V, VBAT = 1.8V

ILI

Input Leakage Current on SCL

VIL = 0V, VIH = VDD

ILO I/O Leakage Current on SDA

VIL = 0V, VIH = VDD

VBATM Battery Level Monitor Threshold

VPBM Brownout Level Monitor Threshold

VTRIP VBAT Mode Threshold

(Note 15)

VTRIPHYS VTRIP Hysteresis

VBATHYS VBAT Hysteresis

ΔFoutT Oscillator Stability vs Temperature VDD = 3.3V

ΔFoutV Oscillator Stability vs Voltage

2.7V ≤ VDD ≤ 5.5V

ΔFoutI Oscillator Initial Accuracy

VDD = 3.3V

2.7

1.8

-1.0

-1.0

-100

-100

2.0

-5

-3

-3

5.5

V

5.5

V

9

4.1

7

µA 10, 11

3.5

6

µA 10, 11

200

500

µA 10, 11

120

400

µA 10, 11

1.0

1.6

µA

10

1.0

5.0

µA

10

100

nA

±0.1

1.0

µA

±0.1

1.0

µA

+100

mV

+100

mV

2.2

2.4

V

30

mV

13

50

mV

13

+5

ppm

6

+3

ppm

+3

ppm

6

5

FN7575.1

July 9, 2010

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