SI3861DV Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3861DV Datasheet PDF : 5 Pages
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New Product
Load Switch with Level-Shift
Si3861DV
Vishay Siliconix
PRODUCT SUMMARY
VDS2 (V)
rDS(on) (W)
4.5 to 20
0.105 @ VIN = 10 V
0.150 @ VIN = 5.0 V
0.175 @ VIN = 4.5 V
FEATURES
D 105-mW Low rDS(on) TrenchFETt
D 4.5 to 20-V Input
D 1.5 to 8 -V Logic Level Control
ID (A)
"2.3
"1.9
"1.7
4.5ĆV Rated
D Low Profile, Small Footprint TSOP-6 Package
D 3000-V ESD Protection On Input Switch, VON/OFF
D Adjustable Slew-Rate
DESCRIPTION
The Si3861DV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFETR is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3861DV operates on
supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.
APPLICATION CIRCUITS
Si3861DV
VIN
R1
4
Q2
6
2, 3
C1
6
5
ON/OFF
Co
Q1
Ci
1
R2
R2
VOUT
LOAD
GND
Switching Variation
R2 @ VIN = 5 V, R1 = 20 kW
20
tf
16
IL = 1 A
VON/OFF = 3 V
12
Ci = 10 mF
Co = 1 mF
td(off)
8
tr
4
td(on)
0
0
2
4
6
8
10
R2 (kW)
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
COMPONENTS
R1
Pull-Up Resistor
Typical 10 kW to 1 mW*
R2
Optional Slew-Rate Control
Typical 0 to 100 kW*
C1
Optional Slew-Rate Control
Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
The Si3861DV is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
www.vishay.com S FaxBack 408-970-5600
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