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2N4341 Просмотр технического описания (PDF) - InterFET

Номер в каталоге
Компоненты Описание
производитель
2N4341 Datasheet PDF : 1 Pages
1
B-12
01/99
2N4340, 2N4341
N-Channel Silicon Junction Field-Effect Transistor
¥ Small Signal Amplifiers
¥ Current Regulators
¥ Voltage-Controlled Resistors
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating (to 175°C)
– 50 V
50 mA
300 mW
2mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
V(BR)GSS
IGSS
VGS(OFF)
IDSS
ID(OFF)
2N4340 2N4341
Min Max Min Max Unit
– 50
– 50
V
– 100
– 100 pA
– 100
– 100 nA
–1 –3 –2 –6 V
1.2 3.6 3 9 mA
0.05
0.07 nA
(– 5)
(– 10) V
rds(on)
gfs
gos
Ciss
Crss
1500
800
1300 3000 2000 4000 µS
30
60 µS
7
7 pF
3
3 pF
Noise Figure
NF
1
1 dB
Process NJ16
Test Conditions
IG = – 1 µA, VDS = ØV
VGS = – 30V, VDS = ØV
VGS = – 30V, VDS = ØV
VDS = 15V, ID = 0.1 µA
VDS = 15V, VGS = ØV
TA = 150°C
VDS = 15V, VGS = ( )
VGS = ØV, ID = Ø A
VDS = 15V, VGS = ØV
VDS = 15V, VGS = ØV
VDS = 15V, VGS = ØV
VDS = 15V, VGS = ØV
VDS = 15V, VGS = ØV
RG = 1 M, BW = 200 Hz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMP4340, SMP4341
www.interfet.com

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