BSM75GB120DN2 Просмотр технического описания (PDF) - eupec GmbH

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производитель

BSM75GB120DN2

IGBT Power Module

eupec GmbH 

BSM 75 GB 120 DN2

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 75 A

20

V

VGE 16

14

12

10

8

6

4

2

0

0

600 V

800 V

100

200

300

400 nC 550

QGate

Reverse biased safe operating area

ICpuls = f(VCE) , Tj = 150°C

parameter: VGE = 15 V

2.5

Typ. capacitances

C = f (VCE)

parameter: VGE = 0, f = 1 MHz

10 2

nF

C

10 1

Ciss

10 0

Coss

Crss

10 -1

0

5 10 15 20 25 30 V 40

VCE

Short circuit safe operating area

ICsc = f(VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH

12

ICpuls/IC

1.5

1.0

0.5

ICsc/IC

8

6

4

2

0.0

0 200 400 600 800 1000 1200 V 1600

VCE

0

0 200 400 600 800 1000 1200 V 1600

VCE

6

Oct-21-1997

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