TC51WHM516AXBN65 Просмотр технического описания (PDF) - Toshiba
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TC51WHM516AXBN65 Datasheet PDF : 11 Pages
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ABSOLUTE MAXIMUM RATINGS (See Note 1)
SYMBOL
RATING
VDD
VIN
VOUT
Topr.
Tstrg.
Tsolder
PD
IOUT
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (10 s)
Power Dissipation
Short Circuit Output Current
TC51WHM516AXBN65,70
VALUE
−1.0 to 3.6
−1.0 to 3.6
−1.0 to 3.6
−25 to 85
−55 to 150
260
0.6
50
UNIT
V
V
V
°C
°C
°C
W
mA
DC RECOMMENDED OPERATING CONDITIONS (Ta = −25°C to 85°C)
SYMBOL
PARAMETER
VDD
Power Supply Voltage
VIH
Input High Voltage
VIL
Input Low Voltage
MIN
TYP.
MAX
UNIT
2.6
2.75
3.3
2.0
−0.3*
VDD + 0.3*
V
0.4
* : VIH(Max) VDD+1.0 V with 10 ns pulse width
VIL(Min) -1.0 V with 10 ns pulse width
DC CHARACTERISTICS (Ta = −25°C to 85°C, VDD = 2.6 to 3.3 V) (See Note 3 to 4)
SYMBOL
PARAMETER
TEST CONDITION
MIN TYP. MAX UNIT
IIL
ILO
VOH
VOL
IDDO1
IDDO2
IDDS
IDDSD
Input Leakage Current
VIN = 0 V to VDD
−1.0 +1.0 µA
Output Leakage Current
Output disable, VOUT = 0 V to VDD
−1.0 +1.0 µA
Output High Voltage
IOH = − 0.5 mA
2.0
V
Output Low Voltage
IOL = 1.0 mA
0.4
V
Operating Current
CE1 = VIL
CE2 = VIH, IOUT = 0 mA
tRC = min
40
mA
Page Access Operating Current
CE1 = VIL, CE2 = VIH,
Page add. cycling, IOUT = 0 mA
tPC = min
25
mA
Standby Current(MOS)
CE1 = VDD − 0.2 V, CE2 = VDD − 0.2 V
70
µA
Deep Power-down Standby Current CE2 = 0.2 V
5
µA
CAPACITANCE (Ta = 25°C, f = 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
CIN
Input Capacitance
VIN = GND
COUT
Output Capacitance
VOUT = GND
Note: This parameter is sampled periodically and is not 100% tested.
MAX
10
10
UNIT
pF
pF
2002-08-22 3/11
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