SZMMBZ5246ELT3G(2016) Просмотр технического описания (PDF) - ON Semiconductor
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SZMMBZ5246ELT3G Datasheet PDF : 7 Pages
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MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
100
TA = 25°C
1000
100
10
1
BIAS AT
50% OF VZ NOM
10
1
1
10
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
0.1
0.01
0.00
1
0.0001
0.00001
100
0
+150°C
+ 25°C
- 55°C
10 20 30 40 50 60 70 80 90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
100
100
TA = 25°C
TA = 25°C
10
10
1
1
0.1
0.1
0.01 0
2
4
6
8
10
VZ, ZENER VOLTAGE (V)
12 0.0110
30
50
70
90
VZ, ZENER VOLTAGE (V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
100
90 tr
80
70
60
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
50
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20
40
60
80
t, TIME (ms)
Figure 9. 8 × 20 ms Pulse Waveform
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