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Номер в каталоге
Компоненты Описание
K3287 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
K3287
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
K3287 Datasheet PDF : 8 Pages
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2SK3287
Typical Capacitance vs.
Drain to Source Voltage
100
V
GS
= 0
50
f = 1 MHz
20
10
Coss
5
Ciss
2
Crss
1.0
0.5
0.2
0.1
0
10
20 30 40
50
Drain to Source Voltage V
DS
(V)
10000
5000
Switching Characteristics
2000
1000
500
200
100
50
20
10
0.1
tf
t
d(on)
tr
t
d(off)
V
GS
= 4 V, V
DD
= 10 V
PW = 5 µs, duty < 1 %
0.2
0.5
1.0
Drain Current I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
1.0
0.8
0.6
10 V
0.4
V
GS
= 0,-5V
0.2
5V
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain voltage V
SD
(V)
5
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