DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

3SK297ZP-TL-E Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге
Компоненты Описание
производитель
3SK297ZP-TL-E
Renesas
Renesas Electronics Renesas
3SK297ZP-TL-E Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
3SK297
Noise Figure vs. Drain Current
3.0
VDS = 6 V
VG2S = 3 V
2.4
f = 200 MHz
1.8
1.2
0.6
0
1
2
5
10
20
Drain current ID (mA)
Noise Figure vs. Drain to Source Voltage
2.0
1.6
1.2
0.8
0.4
VG2S = 3 V
ID = 10 mA
f = 200 MHz
0
2
4
6
8 10
Drain to source voltage VDS (V)
Noise Figure vs. Drain Current
10
VDS = 6 V
VG2S = 3 V
8
f = 900 MHz
6
4
2
0
1
2
5
10
20
Drain current ID (mA)
Power Gain vs. Drain to Source Voltage
30
24
18
12
6
VG2S = 3 V
ID = 10 mA
f = 200 MHz
0
2
4
6
8
10
Drain to source voltage VDS (V)
Power Gain vs. Drain Current
20
16
12
8
4
0
1
2
VDS = 6 V
VG2S = 3 V
f = 900 MHz
5
10
20
Drain current ID (mA)
Power Gain vs. Drain to Source Voltage
20
16
12
8
4
VG2S = 3 V
ID = 10 mA
f = 900 MHz
0
2
4
6
8 10
Drain to source voltage VDS (V)
Rev.3.00 Aug 10, 2005 page 4 of 8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]