BUX41 Просмотр технического описания (PDF) - Inchange Semiconductor
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BUX41 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX41
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)
·High Current Capability
·Good Linearity of hFE
APPLICATIONS
·Designed for high speed, high current, high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
250
V
VCEO(SUS) Collector-Emitter Voltage
200
V
VCEX Collector-Emitter Voltage VBE= -2.5V
250
V
VCER Collector-Emitter Voltage RBE= 100Ω
240
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=100℃
TJ
Junction Temperature
3
A
120
W
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.46
℃/W
isc Website：www.iscsemi.cn
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