SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX41
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0; L=25mH
V(BR)EBO Emitter-base sustaining voltage
IE=50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=0.5 A
VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=1 A
VBEsat
Base-emitter saturation voltage
ICEX
Collector cut-off current
ICEO
Collector cut-off current
IC=8 A;IB=1 A
VCE=250V;VBE=-1.5V
TC=125
VCE=160V;IB=0
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT
Transition frequency
Switching times
VEB=5V; IC=0
IC=5A ; VCE=4V
IC=8A ; VCE=4V
IC=1A ; VCE=15V; f=4MHz
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=8A ;IB1=-IB2=1A
VCC=150V,RC=18.75D
MIN TYP. MAX UNIT
200
V
7
V
1.2
V
1.6
V
2.0
V
1.0
5.0
mA
1.0
mA
1.0
mA
15
45
8
8.0
MHz
0.6
µs
1.5
µs
0.4
µs
2